The dopant distribution and surface and structural properties of Er- and Eu-doped GaN samples were investigated using atom probe tomography (APT) and atomic force microscopy (AFM). Erbium accumulation ...

Abstract: Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages ...

The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

Chemical mechanical polishing (CMP) is a critical process in the fabrication of gallium nitride (GaN) materials, which are widely used in electronic devices due to their excellent semiconductor ...

X-ray Diffraction,Atomic Force Microscopy,Chemical Vapor Deposition,Gallium Nitride,Magnetron Sputtering,Molecular Beam Epitaxy,Thin Films,Aluminum Nitride,Deposition Process,Dominant Peak,Film ...