Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...
近日,金融界报道,晶丰芯驰(上海)半导体科技有限公司在国家知识产权局申请了一项名为‘一种GaN基HEMT外延片及其制备方法和用途’的专利(公开号CN119300439A),申请日期为2024年9月。这项专利的核心在于提升GaN基HEMT(高电子迁移率晶体管)外延片的耐压性能,符合当前半导体行业对高性能器件日益增长的需求。 通过特定设计的高阻层,晶丰芯驰的研究团队使用组合材料技术,构建了包含P型Al ...
but the GaN switch will do so. The high performance of the recessed-gate MIS-HEMT was achieved not only due to the low-damage ALE process, but also precise etching AlGaN thickness control.