A new technical paper titled “AlGaN/AlN heterostructures: an emerging platform for integrated photonics” was published by ...

Like aluminum, which is its neighbor on the periodic ... for a range of consumer and defense applications. The use of gallium nitride for wide applications was so significant that it merited ...

The new contract aims to develop "foundational" ultra-wide-bandgap semiconductors using diamond and aluminum nitride. This ...

One of the materials that has garnered significant attention in recent research is Aluminum Nitride (AlN ... layer in enhancing the quality of Gallium Nitride (GaN) films grown on sapphire ...

Aluminum nitride (AlN ... proven experience developing similar materials such as Gallium Arsenide and Gallium Nitride for ...

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...

Professor Isamu Akasaki saw the possibility of its realization in gallium nitride. In 1986, Professor Akasaki used the MOVPE method (metal organic vapor phase epitaxy method) for the formation of a ...

The aluminum on a can amalgamates with the Gallium, and the end result is amazing to watch. Follow TI: On Facebook More from Science Gallium, a lesser common element, has some neat tricks up its ...

String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages ...