Samsung has taken its technological innovation one step further than what was used for 20nm DRAM. Key technology developments include improvements in proprietary cell design technology, QPT (quadruple ...

One approach to optimizing DRAM cells involves shrinking feature sizes ... of 4F2 (where F is the minimum feature size). This design employs a vertical-channel transistor and moves from the ...

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...

Samsung Electronics has officially denied recent reports suggesting plans to revise the design of its fifth-generation 10nm-class DRAM (1b DRAM), emphasizing that no such changes are underway.

San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

Wong’s team has turned to a new type of memory design called Gain Cell memory, which combines the advantages of both DRAM and SRAM. The hybrid gain cell offers a middle ground which has the ...