San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

Researchers are also exploring capacitor-less DRAM designs. One alternative involves gate-controlled thyristors, while another employs a floating body similar to the floating gate used in flash ...

Based on the floating channel effect, the electric field of the channel region is solely modified ... This work unveils a stability mechanism in sub-um IGZO TFTs, providing new insights into achieving ...