San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

The 1T layout is realized by the proposed bipolar junction transistor (BJT) assisted in-situ sensing DRAM (BIS-DRAM), in which the erase and program function are conducted through a BJT embedded in ...