The ICeGaN module includes GaN high electron mobility transistors (HEMTs), along with sensor and surge protection components.[⁠1] GaN HEMTs meet silicon, silicon carbide transistors In GaN HEMTs, ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Recent studies have focused on addressing the challenges associated with the fabrication and reliability of AlGaN/GaN HEMTs, particularly when integrated onto silicon wafers. These devices are ...

By doing so, they were able to achieve a configuration where the HEMT on one side powers ... The polarization properties of ...