芝能智芯出品随着功率器件需求在不同应用场景中的快速增长，单一材料的解决方案已经无法满足电压和电流范围的全面要求。基于此，复合材料与创新架构逐渐成为改善器件性能的关键手段，氮化镓（GaN）凭借高电子迁移率和开关速度的优势，在低功耗和部分高压应用中展现出 ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

增加功率器件的电流通常意味着增加其物理尺寸以保持可接受的功率密度。具有更高击穿电压的材料可以制造更小的器件，因为它们可以承受更高的功率密度。然而，器件之间的间距仍然受到需要充分隔离的限制。垂直器件架构允许设计人员保持相邻器件之间的间隔，同时减少整体电 ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

The impetus to reduce power demands of just about every device out there is ... material—a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). While GaN has been around since the ...

GaN power devices, which are already utilised in consumer ... of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...

In 5G, the number of bits transmitted per second will be humungous, and future systems will ask for even more; current microwave devices which are used to transmit these bits in 4G networks do not ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...