The vision of this new project is to develop transformative GaN-on-Diamond HEMTs and monolithic microwave integrated circuits (MMICs), the technology step beyond current microwave devices. Energy ...

The basic principle of HEMT devices is the heterostructure with modulation doping. This chapter describes an emerging GaN‐based HEMTs device technology appropriate for Radio Frequency and high‐level ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Therefore, GaN-based high electron mobility transistor (HEMT) is very suitable for special applications in high frequency, high power, anti-radiation and high temperature environments. The practical ...

Demonstration of enhancement mode AlN/GaN high electron mobility transistor (HEMT) using oxygen plasma treatment on the gate area prior to the gate metalliation deposition was achieved. Starting with ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new ...

GaN HEMT,High Breakdown Voltage,Junction Temperature,Microstrip,Thermal Conductivity,Additive Manufacturing Methods,Additive Manufacturing Technologies,Aerosol ...