GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...

Built on a GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of ...

Guerrilla RF’s GRF0020D and GRF0030D GaN-on-SiC HEMT power amplifiers deliver up to 50 W of saturated power. Available as bare die, these discrete transistors are intended for wireless infrastructure, ...

EPC has introduced an evaluation board implementing a 40Arms (60A peak) three-phase inverter that will run from 30V to 130V.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

In 5G, the number of bits transmitted per second will be humungous, and future systems will ask for even more; current microwave devices which are used to transmit these bits in 4G networks do not ...

for solid-state power amplifiers (SSPAs) in Ka-, Q- and W-band using the newly developed GaN HEMTs. SSPAs are characterized ...

GaN power devices, which are already utilised in ... adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...