gallium antimonide, indium phosphide, and silicon-germanium in an attempt to create a practical device. In 1955, Rubin Braunstein reported infrared emission from gallium arsenide, however James R.
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'Holy grail for memory tech': New candidate for universal memory emerges in race to replace RAM and NAND — and this one doesn't use a toxic compoundULTRARAM is not silicon-based but rather uses materials known as III-V compound semiconductors, including gallium antimonide (GaSb), indium arsenide (InAs), and aluminium antimonide (AlSb).
China's controls will apply to eight gallium-related products: gallium antimonide, gallium arsenide, gallium metal, gallium nitride, gallium oxide, gallium phosphide, gallium selenide and indium ...
Mid-infrared emission can be achieved using semiconductor lasers such as quantum cascade lasers or those based on lead salt compounds or gallium antimonide. Nonlinear optical technology such as ...
German company M2K Laser was the first in the world to successfully commercialize tapered diode lasers, and is currently the only one making gallium antimonide devices. The company's managing ...
Materials like indium arsenide (InAs) and gallium antimonide (GaSb) are used to form type-III heterojunctions. The quality of the heterojunction interface plays a critical role in determining the ...
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