High Electron Mobility Transistors (HEMTs), particularly those made from Gallium Nitride (GaN), are crucial components in modern electronic devices due to their high efficiency and performance in ...
Electron transport in semiconductors like Gallium Nitride (GaN) and Zinc Oxide (ZnO ... under the influence of a longitudinal electric field, electrons can experience heating due to interactions ...
The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...