The inverter is designed around EPC’s 150V 3mΩ EPC2305 GaN HEMT, a devie developed for 96V battery use. PWM switching is across across 20 to 150kHz (100kHz nominal) and the board includes gate drivers ...

Devices with wide bandgap semiconductors will offer the greater competitive advantage in microinverters and small string inverters, Lux Research says BOSTON, MA – June 25, 2013 – Wide bandgap ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption ...

Efficient Power Conversion Corporation (EPC), the specialist in enhancement-mode gallium nitride (eGaN) power devices ...

This inverter incorporates an interleaved DC ... by controlling the voltage across switches during operation. Gallium Nitride (GaN): A semiconductor material used in high-efficiency power devices ...

EPC has announced the launch of the EPC91104, a high-performance 3-phase BLDC motor drive inverter reference design.

GaN technology offers advantages over traditional silicon-based devices, including higher efficiency and faster switching ...

leading to an upsurge in the demand for power inverters. Technological innovations in the EV sector, particularly the development of silicon carbide (SiC) and gallium nitride (GaN) power ...