Epitaxial growth is a critical process in the fabrication of semiconductor materials, particularly for Gallium Nitride (GaN) and graphene-based nanostructures. This technique allows for the ...

"This five-layer graphene is a material system where many ... the fractional quantum Hall effect in heterostructures of ...

“This five-layer graphene is a material system where many ... quantum Hall effect” was first observed back in 1982 using gallium arsenide and magnets, and the discovery eventually won the ...

Materials like indium arsenide (InAs) and gallium antimonide (GaSb) are used to form type-III heterojunctions ... Nanoengineered heterojunctions using materials like perovskites, silicon ...

The company produces graphene with its proprietary FORZA™ production unit, an industrial-scale, Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) reactor. CrayNano was spun-off from the Norwegian ...

Radiation testing suggests that solar cells made from carbon-based, or organic, materials could outperform conventional silicon and gallium arsenide for generating electricity in the final ...