SiGe heterojunction bipolar transistors (HBTs) are critical components in high-frequency and high-power applications due to their superior performance characteristics. However, understanding their ...

Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) are semiconductor devices that combine silicon and germanium to enhance performance, particularly in high-frequency applications.

This unique band alignment enables tunneling-based devices, such as tunnel diodes and tunneling field-effect transistors (TFETs). Materials like indium arsenide (InAs) and gallium antimonide (GaSb) ...

In particular, they have improved the stability of the n-type transistor without the need of a passivation layer, by adjusting thickness of Te in the heterojunction structure. By utilizing these ...

More information: Yanjie Shao et al, Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement, Nature Electronics (2024). DOI: 10.1038/s41928-024-01279-w ...

Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with a recorded ...

A research team from the University of New South Wales (UNSW) and Chinese-Canadian solar module maker Canadian Solar has investigated how heterojunction (HJT) solar cells are hit by sodium (Na ...

Huasun has started manufacturing activities at its heterojunction (HJT) solar cell factory in Xuancheng, in China's Anhui province. The new factory will have an annual capacity of 2.4 GW and will ...