Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Integra Technologies introduces theIGN3842M130 GaN/SiC transistor operating within the 3.8 to 4.2 GHz frequency range at an average power of 130 W. This device is 100% tested for large signal ...

Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 ...

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...

Recent studies have focused on addressing the challenges associated with the fabrication and reliability of AlGaN/GaN HEMTs, particularly when integrated onto silicon wafers. These devices are ...

Demonstration of enhancement mode AlN/GaN high electron mobility transistor (HEMT) using oxygen plasma treatment on the gate area prior to the gate metalliation deposition was achieved. Starting with ...

This chapter gives an overview of GaN‐based devices for millimeter‐wave (mmW) applications. The recent progress in GaN HEMT (high electron mobility transistor) technology has enabled an order of ...

Therefore, GaN-based high electron mobility transistor (HEMT) is very suitable for special applications in high frequency, high power, anti-radiation and high temperature environments. The practical ...

However, for the cascode GaN High electron mobility transistor (HEMT), which consists of a Si MOSFET and a depletion-mode HEMT(DHEMT), the inside mechanisms of SC have not been fully investigated yet.