然而，事情并非如此简单：为了在SiC制造领域站稳脚跟，就必须拥有专门用于SiC的昂贵设备。SiC晶圆的生长温度超过2700℃，生长速度至少比Si慢200倍，这就需要大量的能量。另一方面，GaN在很大程度上可以使用与Si半导体制程相同的设备，GaN外延 ...

Earlier this month, the Andhra Pradesh state government in India signed a memorandum of understanding (MoU) with Indichip ...

This method is appropriate for characterizing all common semiconductor substrates, such as SiC, Si, GaAs, InP, and GaN. Ion implantation is crucial in 4H-SiC semiconductor manufacturing and ...