Its ultra-wide bandgap properties make it suitable for high-voltage and high-temperature applications, surpassing traditional materials like silicon carbide (SiC) and gallium nitride (GaN).
wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150W. A statement from the Ministry of Defence stated that these advancements also include Monolithic ...
Wolfspeed designs and fabricates silicon carbide (SiC) and gallium nitride (GaN) power and RF semiconductors. The company also produces SiC and GaN-on-SiC epitaxial wafers. Product families include ...