A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...
SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...
Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching ...
SemiQ, a supplier of silicon carbide solutions for high performance applications, presents the new QSiC 1200V MOSFET.
Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...
DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in ...
Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...
NYSE:WOLF) Wolfspeed Launches New Gen 4 MOSFET Technology Platform to Deliver Breakthrough Performance in Real-World ...
Holistic efficiency improvements enable reduced system costs and development time while maximizing application lifetime, representing a pivotal progression for silicon carbide technology Wolfspeed ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback