“Within the upcoming year, we aim to initiate the manufacture of OPCs based on indium gallium nitride (InGaN) and indium aluminum nitride (InAlN) as proof of concept, laying the groundwork to ...

Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An ...

The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN ... company is also exploring its use in plasma lights for vertical farming and sterilization applications.

Gallium nitride (GaN) is beginning to show up across a broad range of power semiconductor ... “They have a lateral configuration — unlike SiC power devices, which have a vertical configuration,” ...

Just as lithium-ion batteries have made nickel-cadmium cells boring and old hat, gallium nitride semiconductors are making silicon parts look unimpressive by comparison. [Brian Dipert] looked at ...

Savvy power design engineers know how to improve power-converter density and efficiency by incorporating gallium-nitride (GaN ... due to field crowding at the vertical edge of the gate near ...

Dec. 09, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation, power semiconductor company and industry leader in gallium nitride (GaN) power ICs and ...

Navitas growth was driven by strong demand for its advanced, high-efficiency, wide-bandgap gallium nitride (GaN) and silicon carbide (SiC) power components, across a growing number of global ...