A new technical paper titled “AlGaN/AlN heterostructures: an emerging platform for integrated photonics” was published by ...

Gallium Nitride (GaN) power devices are becoming ... One significant area of research involves the development of vertical GaN p-n diodes capable of withstanding high breakdown voltages.

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Tech Hub—a consortium led by the University of Vermont (UVM) and including GlobalFoundries and the State of Vermont—has been ...

The Vermont Gallium Nitride Tech Hub, led by UVM and including GlobalFoundries and the State of Vermont, received $23.7 ...

The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN ... company is also exploring its use in plasma lights for vertical farming and sterilization applications.

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...

String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages ...

gallium nitride, gallium oxide, gallium phosphide, gallium selenide and indium gallium arsenide. They will also apply to six germanium products: germanium dioxide, germanium epitaxial growth ...

Power Diamond Systems (PDS), which conducts research and development of next-generation power devices and high-frequency devices, announced on the 17th that it has raised approximately 100 million ...