The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

Researchers at Cornell University, in collaboration with the Polish Academy of Sciences, have made a major breakthrough in ...

Tech Hub—a consortium led by the University of Vermont (UVM) and including GlobalFoundries and the State of Vermont—has been ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

The Vermont Gallium Nitride Tech Hub, led by UVM and including GlobalFoundries and the State of Vermont, received $23.7 ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

Electronics designers are moving away from conventional Si-based power electronics and towards wide-bandgap solutions.

String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages ...