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powerelectronicsworld
20 小时
Wolfspeed launches Gen 4 SiC MOSFET technology
Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...
powerelectronicsworld
2 天
Nordic Semi adds new PMIC for low energy products
Nordic Semiconductor has announced a further addition to its nPM family of Power Management ICs (PMICs), for wireless mice ...
powerelectronicsworld
3 天
Turbocharging the GaN MOSFET with a HfO₂ gate
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
powerelectronicsworld
5 天
SemiQ launches hi-rel 1700V SiC MOSFETs
SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...
powerelectronicsworld
3 天
Element Six unveils Cu-diamond composite
Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...
powerelectronicsworld
3 天
Transforming the current density of AlN Schottky barrier diodes
By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...
powerelectronicsworld
2 天
Power Integrations announces MotorXpert v3.0
Power Integrations has announced MotorXpert v3.0, a software suite for configuration, control and sensing of BLDC inverters that utilise the company’s BridgeSwitch motor-driver ICs.
powerelectronicsworld
5 天
Farnell to stock tiny DC/DC regulator
UK-based distributor Farnell is now stocking the new MicroBRICK regulator module from Vishay Intertechnology, expanding its ...
powerelectronicsworld
11 天
Renesas REXFET-1 process means better MOSFETs
Renesas Electronics has introduced new 100V high-power N-Channel MOSFETs that are said to deliver industry-leading ...
powerelectronicsworld
10 天
Boosting AlN-on-AlN Schottky barrier diode performance
Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...
powerelectronicsworld
12 天
Improving annealing conditions for GaN MOSFETs
Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...
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