GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

近年来，随着人工智能的快速发展，AI 算力中心的能耗急剧上升，电力供应也面临巨大压力。此前，特斯拉创始人兼 CEO 埃隆·马斯克曾对 AI 所面临的瓶颈做出预测。他认为，AI ...

The European Commission is investing in a groundbreaking quantum chip that will use Germanium-Silicon (GeSi) to combine light ...

Wide bandgap materials and advanced packaging are revolutionizing power, but thermal and integration challenges persist.

Ingots are sliced into wafers just a few millimeters thick, lapped and polished to a flawless mirror shine, and then etched with functional patterns (such as resistors, transistors, and capacitors ...

High Electron Mobility Transistors (HEMTs) are a type of field-effect transistor that are particularly well-suited for high-frequency and high-power applications. They are made from wide bandgap ...

Kaiser Aluminum Corporation's ( NASDAQ:KALU ) investors are due to receive a payment of $0.77 per share on 14th of... FRANKLIN, Tenn., Jan. 14, 2025 (GLOBE NEWSWIRE) -- Kaiser Aluminum Corporation ...

Alumina Prices Plunge; February Aluminum Costs May Pull Back by Nearly 2,500 Yuan/mt [SMM Analysis] ...