Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

近日，金融界报道，晶丰芯驰（上海）半导体科技有限公司在国家知识产权局申请了一项名为‘一种GaN基HEMT外延片及其制备方法和用途’的专利（公开号CN119300439A），申请日期为2024年9月。这项专利的核心在于提升GaN基HEMT（高电子迁移率晶体管）外延片的耐压性能，符合当前半导体行业对高性能器件日益增长的需求。 通过特定设计的高阻层，晶丰芯驰的研究团队使用组合材料技术，构建了包含P型Al ...

After hours: January 17 at 6:40:37 PM EST Loading Chart for GAN ...

MNIST, SVHN, CIFAR10 experiments in the mnist_svhn_cifar10 folder ...

Finally, we suggest a new metric for evaluating GAN results, both in terms of image quality and variation. As an additional contribution, we construct a higher-quality version of the CelebA dataset.