Based on this, a novel annealing-grinding (AG) process is proposed to improve the electrical characteristics of GaAs PCSS. With an electrode gap of 10 mm and a bias voltage of 40 kV, the leakage ...
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Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic Department of Physics and Measurements, University of Chemistry and Technology Prague, Technická 5, 166 ...
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Abstract: In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the ...
Figure 2. Fabrication process involving (A) the preparation of both donor and acceptor substrates and (B) the micro-masonry step used to transfer and bond nanoplates onto base structures followed by ...