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IEEE
18 天
Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short ...
Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=16 ...
electronicsforu
4 天
SiC MOSFET Family For Power Conversion
AEC-Q101 qualified bare die and discrete packaged devices undergo WLBI screening and are tested for avalanche breakdown ...
Compoundsemiconductor.net
3 天
Wolfspeed launches Gen 4 SiC MOSFET technology
Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...
Compoundsemiconductor.net
4 天
Turbocharging the GaN MOSFET with a HfO₂ gate
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
Yahoo Finance
3 天
Forum Energy Technologies, Inc. (FET)
After hours: January 23 at 6:01:18 PM EST ...
4 天
Diodes公司推出85V、符合汽车标准的LED驱动器,支持多种拓扑和故障 ...
Diodes 公司 (Diodes)近日宣布推出AL8866Q LED 驱动器,扩大符合汽车标准*的产品组合。这款直流开关 LED 驱动控制器可驱动外部 MOSFET,支持降压、升压、降升压及单端一次侧电感转换器 (SEPIC) 拓扑,适用于高功率 ...
Benzinga.com
20 天
Fetch.ai (FET) Price Prediction 2025, 2026, 2027 – 2030 — Will It Reach $10?
What Is Fetch.ai (FET)? Fetch.ai was founded in 2017 by Humayun Sheikh and Toby Simpson, who have backgrounds in AI research and blockchain technology. The project aims to create a decentralized ...
Electronic Design
2 天
2024 PowerBest Winners: Power Devices
SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power ...
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