San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

Abstract: A novel device integrating all the functions of the three-transistor Dynamic Random Access Memory (3T-DRAM) into one-transistor (1T) layout is demonstrated with 22 nm fully depleted ...