芝能智芯出品随着功率器件需求在不同应用场景中的快速增长，单一材料的解决方案已经无法满足电压和电流范围的全面要求。基于此，复合材料与创新架构逐渐成为改善器件性能的关键手段，氮化镓（GaN）凭借高电子迁移率和开关速度的优势，在低功耗和部分高压应用中展现出强大的竞争力。通过与硅（Si）和碳化硅（SiC）等材料的结 ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

增加功率器件的电流通常意味着增加其物理尺寸以保持可接受的功率密度。具有更高击穿电压的材料可以制造更小的器件，因为它们可以承受更高的功率密度。然而，器件之间的间距仍然受到需要充分隔离的限制。垂直器件架构允许设计人员保持相邻器件之间的间隔，同时减少整体电路占用空间。

co-founder and CTO at Cambridge GaN Devices, combined an “integrated circuit enhancement GaN” (ICeGaN) module with a silicon insulated gate bipolar transistor (IGBT) to build a traction inverter for ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

例如，Cambridge GaN Devices 的“ICeGaN”模块结合 GaN HEMT 和硅 IGBT，不仅增强了牵引逆变器在低负载状态下的效率，还大幅降低了寄生损耗。这种架构能够 ...

的紧凑型车载充电器 (OBC)，该充电器采用了基于GaN单晶衬底的1200V 横向GaN HEMT器件。 近年来，为了缩短充电时间，电动汽车电池的电压不断提高。为了应对这些趋势，业界正在开发的OBC旨在实现800V和22kW的高电压和高输出功率。 但是，功率转换损耗会随着输出的 ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

GaN power devices, which are already utilised in consumer ... of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...

In 5G, the number of bits transmitted per second will be humungous, and future systems will ask for even more; current microwave devices which are used to transmit these bits in 4G networks do not ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...