GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

芝能智芯出品随着功率器件需求在不同应用场景中的快速增长，单一材料的解决方案已经无法满足电压和电流范围的全面要求。基于此，复合材料与创新架构逐渐成为改善器件性能的关键手段，氮化镓（GaN）凭借高电子迁移率和开关速度的优势，在低功耗和部分高压应用中展现出 ...

增加功率器件的电流通常意味着增加其物理尺寸以保持可接受的功率密度。具有更高击穿电压的材料可以制造更小的器件，因为它们可以承受更高的功率密度。然而，器件之间的间距仍然受到需要充分隔离的限制。垂直器件架构允许设计人员保持相邻器件之间的间隔，同时减少整体电 ...

Abstract: We fabricated a gated-anode diode employing an AlGaN/GaN high electron mobility transistor (HEMT) to serve as a rectification device in a 5.8-GHz band microwave wireless power transmission ...

The impetus to reduce power demands of just about every device out there is ... material—a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). While GaN has been around since the ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=63 ...

例如，Cambridge GaN Devices研发的“ICeGaN”模块就是这种协同设计的成功典范，它通过结合GaN HEMT与硅IGBT，强调了在低负载状态下的效率提升，同时大幅减少寄生损耗，从而在电动汽车的驱动系统中展现出显著的优势。 GaN与SiC的联合提升 相较于硅，碳化硅（SiC ...