Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

The global monolithic microwave IC market is expected to grow from USD 14.53 billion in 2025 to USD 23.91 billion by 2030 at a CAGR of 10.5% ...

The global monolithic microwave IC market is expected to grow from USD 14.53 billion in 2025 to USD 23.91 billion by 2030 at a CAGR of 10.5% during the forecast period 2025?2030 according to a new ...

The global monolithic microwave IC market is expected to grow from USD 14.53 billion in 2025 to USD 23.91 billion by 2030 at ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

例如，Cambridge GaN Devices研发的“ICeGaN”模块就是这种协同设计的成功典范，它通过结合GaN HEMT与硅IGBT，强调了在低负载状态下的效率提升，同时大幅减少寄生损耗，从而在电动汽车的驱动系统中展现出显著的优势。 GaN与SiC的联合提升 相较于硅，碳化硅（SiC ...

例如，与硅（Si）和碳化硅（SiC）的结合使得GaN的性能得到了有效提升。Cambridge GaN Devices公司推出的“ICeGaN”模块，通过将GaN高电子迁移率晶体管（HEMT）与硅基绝缘栅双极型晶体管（IGBT）相结合，极大增强了电动汽车牵引逆变器在低负载状态下的效率，并且减少 ...

增加功率器件的电流通常意味着增加其物理尺寸以保持可接受的功率密度。具有更高击穿电压的材料可以制造更小的器件，因为它们可以承受更高的功率密度。然而，器件之间的间距仍然受到需要充分隔离的限制。垂直器件架构允许设计人员保持相邻器件之间的间隔，同时减少整体电路占用空间。

芝能智芯出品随着功率器件需求在不同应用场景中的快速增长，单一材料的解决方案已经无法满足电压和电流范围的全面要求。基于此，复合材料与创新架构逐渐成为改善器件性能的关键手段，氮化镓（GaN）凭借高电子迁移率和开关速度的优势，在低功耗和部分高压应用中展现出强大的竞争力。通过与硅（Si）和碳化硅（SiC）等材料的结 ...

co-founder and CTO at Cambridge GaN Devices, combined an “integrated circuit enhancement GaN” (ICeGaN) module with a silicon insulated gate bipolar transistor (IGBT) to build a traction inverter for ...

“I must correct that,” said DPM Gan, who is also Trade and Industry Minister. Singapore has developed “quite an elaborate” code of conduct for how it should develop and deploy AI in an ...

After a recent Windows update, some users have reported the computer or other devices fail to appear in the network list. Because of that, they are unable to share files and printers between ...