The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

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VisIC plans to ramp production of its GaN depletion-mode HEMTs for electric vehicle inverters before the end of this decade. Designers of electric vehicles are facing a dilemma when selecting the ...

High Electron Mobility Transistors (HEMTs), particularly those made from Gallium Nitride (GaN), are crucial components in modern electronic devices due to their high efficiency and performance in ...

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First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

However, over the past year, I have undertaken extensive testing, evaluating close to 300 GaN (gallium nitride) chargers of varying sizes, power outputs, and manufacturers. Also: This portable ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...