The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

Recent research has focused on innovative materials and methods to enhance thermal dissipation in GaN HEMTs, particularly through the integration of diamond materials, which possess excellent ...

The ICeGaN module includes GaN high electron mobility transistors (HEMTs), along with sensor and surge protection components.[⁠1] GaN HEMTs meet silicon, silicon carbide transistors In GaN HEMTs, ...

Shandong University team reports an novel enhancement-mode p-GaN gate HEMTs with the highest threshold voltage a 7.1V Researchers at Shandong University in China have reported an enhancement-mode ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new ...

Recent studies have focused on addressing the challenges associated with the fabrication and reliability of AlGaN/GaN HEMTs, particularly when integrated onto silicon wafers. These devices are ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=16 ...

Diamonds have long been the ultimate symbol of love and commitment, their sparkling brilliance forever linked to life’s most emotional moments. Thanks to decades of marketing genius—most ...

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Companies poured billions into fabs and facilities around the world as regions continue to build self-sufficiency and form ...