GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Figure 3 details the proposed vertical isolation methodology. The n+ GaN layer is simulated with varying doping densities and thicknesses. Figure 3: Cross-sectional schematic of HEMT showing isolation ...

Shandong University team reports an novel enhancement-mode p-GaN gate HEMTs with the highest threshold voltage a 7.1V Researchers at Shandong University in China have reported an enhancement-mode ...

GaN HEMTs in both power stages maintain high efficiency at high frequencies ... It comes with a bill of materials (BOM), schematics, assembly drawing, printed circuit board (PCB) layout, and more. The ...

For this discussion, the flyback converter used in portable AC-DC supplies is simplified with a new semiconductor material—a gallium-nitride (GaN) high-electron-mobility transistor (HEMT).

EPC Space is the first company to achieve this certification for Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT). Looking forward, EPC Space plans to roll out 18 JANS-certified Rad ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=16 ...

'ZDNET Recommends': What exactly does it mean? ZDNET's recommendations are based on many hours of testing, research, and comparison shopping. We gather data from the best available sources ...

The database consists of 2032 10-second 12-lead ECG signal records representing different morphologies of the ECG signal. Signals are digitized at 500 samples per second. The ECGs were collected from ...

MNIST, SVHN, CIFAR10 experiments in the mnist_svhn_cifar10 folder ...

You can use the LMC555 and an RC network go from 0.01 V to 1000 V using one I/O pin, you just have to find a resistor rated for 1 Continue Reading ...