GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Figure 3 details the proposed vertical isolation methodology. The n+ GaN layer is simulated with varying doping densities and thicknesses. Figure 3: Cross-sectional schematic of HEMT showing isolation ...

For this discussion, the flyback converter used in portable AC-DC supplies is simplified with a new semiconductor material—a gallium-nitride (GaN) high-electron-mobility transistor (HEMT).

EPC Space is the first company to achieve this certification for Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT). Looking forward, EPC Space plans to roll out 18 JANS-certified Rad ...