GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

As with all of Guerrilla RF's bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) ...

Built on a GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of ...

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power ...

EPC has introduced an evaluation board implementing a 40Arms (60A peak) three-phase inverter that will run from 30V to 130V.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

GaN power devices, which are already utilised in ... adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...