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Semiconductor Engineering
9 小时
Improving GaN Device Architectures
GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...
Compoundsemiconductor.net
17 小时
Turbocharging the GaN MOSFET with a HfO₂ gate
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
Compoundsemiconductor.net
4 小时
EU funds perovskite tandems for fuel-free space propulsion
Now, a €3.9m EU-funded project called ET COMPACT is developing three fuel-free propulsion systems around solar energy and ...
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