Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from ...

Built on a GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new ...

Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP ...