GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Companies poured billions into fabs and facilities around the world as regions continue to build self-sufficiency and form ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Built on a GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of ...

EPC has introduced an evaluation board implementing a 40Arms (60A peak) three-phase inverter that will run from 30V to 130V.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from ...

Global Sata Ssd Market Research Report: By Form Factor ,Interface ,Capacity ,Application ,NAND Flash Type ,Regional - Forecast to 2032.

在这种背景下， 罗姆 致力于通过电子技术解决社会问题，专注于开发在大功率应用中可提升效率的关键—— 功率半导体 ，并提供相关的电源解决方案。本白皮书将通过“Power Eco Family”的品牌理念，介绍为构建应用生态系统做出贡献的 罗姆 ...

射频功放芯片通常由多种功能模块组成，包括输入匹配网络、功率放大器主体、输出匹配网络以及保护电路等。这些模块共同协作，将输入的射频信号进行放大，并输出到天线端。在放大过程中，射频功放芯片需要保持高效率、低失真和低噪声等特性，以确保通信系统的稳定性和可靠性。射频功放芯片核心参数包括增益、带宽、转换率、效率、线性度、最大输出功率、输出输入阻抗等，众多平衡的性能指标非常考验设计能力。

Teledyne HiRel Semiconductors has announced the availability of its Gallium Nitride (GaN) high-power RF switch, model ...

Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and is designed to replace ...