GaN power semiconductors, Infineon highlights that gallium nitride will be a game-changing semiconductor material ...

Recent advancements in inverter technologies and topologies have focused on improving efficiency, reducing costs, and addressing common issues such as leakage current and power pulsation.

The inverter is designed around EPC’s 150V 3mΩ EPC2305 GaN HEMT, a devie developed for 96V battery use. PWM switching is across across 20 to 150kHz (100kHz nominal) and the board includes gate drivers ...

Efficient Power Conversion Corporation (EPC), a leading developer of enhancement-mode gallium nitride (eGaN) power devices has introduced the EPC91200. The EPC91200 is a versatile motor drive inverter ...

Researchers from the University of Science and Technology of China have designed a novel topology for a bidirectional inverter for uninterruptible power supply (UPS). The proposed inverter design ...

GaN technology offers advantages over traditional silicon-based devices, including higher efficiency and faster switching speeds, EPC said.