The inverter is designed around EPC’s 150V 3mΩ EPC2305 GaN HEMT, a devie developed for 96V battery use. PWM switching is across across 20 to 150kHz (100kHz nominal) and the board includes gate drivers ...

for higher power density and efficiency. They have succeeded in developing an ultra-efficient circuit topology for voltage converters based on GaN transistors, with an electrical efficiency of 99.74%.

leading to an upsurge in the demand for power inverters. Technological innovations in the EV sector, particularly the development of silicon carbide (SiC) and gallium nitride (GaN) power ...