School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran 14395-553, Iran Center of Excellence in Materials for Low Energy Consumption Technologies, ...

School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China ...

The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

From this world comes [colectornet], with a video that crosses the bridge between our two communities, examining the so-called transistor wars of the late 1950s and through the ’60s. Just as ...

===== Benchmarks for 3×3 Float64 matrices ===== Matrix multiplication -> 5.9x speedup Matrix multiplication (mutating) -> 1.8x speedup Matrix addition -> 33.1x ...

Ferroelectric materials can provide non-volatile memory, serving an important functional gap somewhere between DRAM and flash memory. Indeed, ferroelectrics for memory and 2D channels for transistors ...