A new technical paper titled “Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors” was published by researchers at Rochester Institute of Technology and Corning Research ...

Ferroelectrics at the nanoscale exhibit a wealth of polar and sometimes swirling (chiral) electromagnetic textures that not ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

Researchers at the University of California- Santa Barbara have devised a new framework that could contribute to this quest, enabling the fabrication of scalable three-dimensional (3D) field-effect ...

Abstract: The limiting noise mechanism in field-effect transistors is thermal noise of the conducting channel. The noise can be represented by a current generator i2 in parallel to the output. The ...

College of Chemical and Material Engineering, Quzhou University, Quzhou 324000, China College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310014, China College of Chemical and ...

Junctionless transistors and nanowire devices represent a significant advancement in semiconductor technology, particularly in the context of miniaturization and performance enhancement.

Abstract: This study proposes improved compact models for impact ionization in the intrinsic and drift regions of Laterally-Diffused-Metal-Oxide-Semiconductor (LDMOS) transistors. These models are ...

Chiral topological textures in BaTiO3 nanoislands demonstrate potential for electrical manipulation, enhancing prospects for future information technologies.