For instance, in 16-nm FinFETs, the degradation was found to be influenced by the transistor layout and bias conditions during irradiation, with short-channel devices exhibiting better tolerance ...
Researchers at the University of California- Santa Barbara have devised a new framework that could contribute to this quest, enabling the fabrication of scalable three-dimensional (3D) field-effect ...
A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...
This repository contains the design, simulation, and analysis of a 6T SRAM (Six-Transistor Static Random-Access Memory) cell. The project explores the implementation of a standard 6T SRAM cell used in ...
The proposed 8-point fully parallel DCT leverages a customized datapath based on a standard cell approach, integrating pass transistor logic and a full custom layout in UMC 90 nm CMOS technology.