A new technical paper titled “AlGaN/AlN heterostructures: an emerging platform for integrated photonics” was published by ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Gallium Nitride (GaN) power devices are becoming ... One significant area of research involves the development of vertical GaN p-n diodes capable of withstanding high breakdown voltages.

The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages ...

gallium nitride, gallium oxide, gallium phosphide, gallium selenide and indium gallium arsenide. They will also apply to six germanium products: germanium dioxide, germanium epitaxial growth ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN ... company is also exploring its use in plasma lights for vertical farming and sterilization applications.

Power Diamond Systems (PDS), which conducts research and development of next-generation power devices and high-frequency devices, announced on the 17th that it has raised approximately 100 million ...