Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

Abstract: Detrapping mechanisms and their dependence on applied bias have been studied in buffer-free AlGaN/GaN HEMTs on SiC. It is shown that the detrapping time constant decreases by orders of ...

Abstract: We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For ...

近日，金融界报道，晶丰芯驰（上海）半导体科技有限公司在国家知识产权局申请了一项名为‘一种GaN基HEMT外延片及其制备方法和用途’的专利（公开号CN119300439A），申请日期为2024年9月。这项专利的核心在于提升GaN基HEMT（高电子迁移率晶体管）外延片的耐压性能，符合当前半导体行业对高性能器件日益增长的需求。 通过特定设计的高阻层，晶丰芯驰的研究团队使用组合材料技术，构建了包含P型Al ...

在当前以高科技驱动发展的时代，大功率微波技术的创新不仅加速了通信等领域的进步，也为电子设备的安全性带来了新的挑战。随着高空核电磁脉冲、超宽谱强电磁脉冲及窄谱高功率微波等技术的快速发展，现代电子装备面临来自高能量密度电磁环境的威胁，这些攻击可能导致设备性能的干扰、降级甚至完全失效。因此，电磁防护器件的研究显得尤为重要，微波限幅器作为该领域的关键器件之一，其技术进步受到越来越多的关注。西安电子科技大学 ...

After hours: January 17 at 6:40:37 PM EST Loading Chart for GAN ...

The database consists of 2032 10-second 12-lead ECG signal records representing different morphologies of the ECG signal. Signals are digitized at 500 samples per second. The ECGs were collected from ...

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MNIST, SVHN, CIFAR10 experiments in the mnist_svhn_cifar10 folder ...

The days of carrying around a bulky laptop charger and a separate charger for your phone are over and if you haven’t tried one yet, there’s never been a better time to pick up a GaN charger.

National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ...