Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

近日，金融界报道，晶丰芯驰（上海）半导体科技有限公司在国家知识产权局申请了一项名为‘一种GaN基HEMT外延片及其制备方法和用途’的专利（公开号CN119300439A），申请日期为2024年9月。这项专利的核心在于提升GaN基HEMT（高电子迁移率晶体管）外延片的耐压性能，符合当前半导体行业对高性能器件日益增长的需求。 通过特定设计的高阻层，晶丰芯驰的研究团队使用组合材料技术，构建了包含P型Al ...

在当前以高科技驱动发展的时代，大功率微波技术的创新不仅加速了通信等领域的进步，也为电子设备的安全性带来了新的挑战。随着高空核电磁脉冲、超宽谱强电磁脉冲及窄谱高功率微波等技术的快速发展，现代电子装备面临来自高能量密度电磁环境的威胁，这些攻击可能导致设备性能的干扰、降级甚至完全失效。因此，电磁防护器件的研究显得尤为重要，微波限幅器作为该领域的关键器件之一，其技术进步受到越来越多的关注。西安电子科技大学 ...

Abstract: We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For ...

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The days of carrying around a bulky laptop charger and a separate charger for your phone are over and if you haven’t tried one yet, there’s never been a better time to pick up a GaN charger.

Abstract: Detrapping mechanisms and their dependence on applied bias have been studied in buffer-free AlGaN/GaN HEMTs on SiC. It is shown that the detrapping time constant decreases by orders of ...

STMicroelectronics backs Innoscience’s IPO, boosting GaN semiconductor market potential. Despite Innoscience and its partners not releasing any official statements, according to this document, ...

GaN HEMT 的一个关键优势是在 GaN 和 AlGaN 层的界面处形成高迁移率 2DEG 沟道。该通道具有高导电性，并以非常低的电阻支持横向电流。 解决基材挑战 GaN 单向开关(例如 CoolGaN、CoolMOS 和 CoolSiC 产品系列中的开关)使用基板作为开关器件的源极端子(图 3a)。然而 ...

[导读]氮化镓(GaN)基功率半导体在功率转换方面具有许多优势。它们在许多应用中的使用不断增加，例如移动设备的电源适配器和数据中心的电源。横向高电子迁移率晶体管 (HEMT) 是应用最广泛的 GaN 器件。该器件的退化机制已被广泛研究并被纳入可靠性测试标准。

but the GaN switch will do so. The high performance of the recessed-gate MIS-HEMT was achieved not only due to the low-damage ALE process, but also precise etching AlGaN thickness control.

EasyGaN is looking at the development of AlGaN-channel HEMTs for power electronics, targeting ultra-wide bandgap applications with high breakdown voltages (figure 3). EasyGaN is a pure epitaxy player, ...