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Compoundsemiconductor.net
5 天
Mesa sidewall design improves HV DUV LEDs
Additionally, experimental validation showed that HV DUV LEDs with four sub-mesas exhibited an efficiency droop of 34.6 ...
腾讯网
6 天
改进GaN器件架构
增加功率器件的电流通常意味着增加其物理尺寸以保持可接受的功率密度。具有更高击穿电压的材料可以制造更小的器件,因为它们可以承受更高的功率密度。然而,器件之间的间距仍然受到需要充分隔离的限制。垂直器件架构允许设计人员保持相邻器件之间的间隔,同时减少整体电 ...
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