Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

近日，金融界报道，晶丰芯驰（上海）半导体科技有限公司在国家知识产权局申请了一项名为‘一种GaN基HEMT外延片及其制备方法和用途’的专利（公开号CN119300439A），申请日期为2024年9月。这项专利的核心在于提升GaN基HEMT（高电子迁移率晶体管）外延片的耐压性能，符合当前半导体行业对高性能器件日益增长的需求。 通过特定设计的高阻层，晶丰芯驰的研究团队使用组合材料技术，构建了包含P型Al ...

在当前以高科技驱动发展的时代，大功率微波技术的创新不仅加速了通信等领域的进步，也为电子设备的安全性带来了新的挑战。随着高空核电磁脉冲、超宽谱强电磁脉冲及窄谱高功率微波等技术的快速发展，现代电子装备面临来自高能量密度电磁环境的威胁，这些攻击可能导致设备性能的干扰、降级甚至完全失效。因此，电磁防护器件的研究显得尤为重要，微波限幅器作为该领域的关键器件之一，其技术进步受到越来越多的关注。西安电子科技大学 ...

Abstract: We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For ...

National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ...

The days of carrying around a bulky laptop charger and a separate charger for your phone are over and if you haven’t tried one yet, there’s never been a better time to pick up a GaN charger.

Abstract: Detrapping mechanisms and their dependence on applied bias have been studied in buffer-free AlGaN/GaN HEMTs on SiC. It is shown that the detrapping time constant decreases by orders of ...