Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

The proposed approach was applied to GaN High Electron Mobility Transistors (HEMTs) of various sizes on SiC and Diamond ... and verified the validity of the proposed approach for small-signal modeling ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

Even as large language models have been making a splash with ChatGPT and its competitors, another ... [+] incoming AI wave has been quietly emerging: large database models. Even as large language ...

“With consumer devices the requirements are certainly less stringent, but should a GaN-based device fail in a data centre that is certainly more challenging – likewise with the automotive industry.” ...

While alternative objectives have been introduced, issues with fragile losses persist, hindering progress. Popular GAN models like StyleGAN incorporate tricks such as gradient-penalized losses and ...

2025 年了，GAN 能否击败扩散模型？答案是 Yes！ 本周五，AI 社区开始讨论一种全新极简主义 GAN（生成对抗网络）。 现代版 GAN 基准论文成为了周五 ...